Low-stress indium-tin-oxide thin films rf magnetron sputtered on polyester substrates
Identifieur interne : 00DE66 ( Main/Repository ); précédent : 00DE65; suivant : 00DE67Low-stress indium-tin-oxide thin films rf magnetron sputtered on polyester substrates
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Abstract
Using rf magnetron sputtering, we have grown low resistivity (∼3×10-4 Ωcm), high transparency (>80%) indium-tin-oxide thin films with near zero stress on polyester substrates, near room temperature. We concluded from analysis of sputtered ions and atoms that bombardment by energetic (>70 eV) negative oxygen ions caused high stress (∼1 GPa) in films grown at lower (6 mTorr) pressure. Sputtering at 12 mTorr dissipated energetic bombardment and reduced film stress to about zero, independent of oxygen partial pressure (pO2). However, increasing pO2 did affect film microstructure, that is, crystallinity, roughness, and grain size. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Low-stress indium-tin-oxide thin films rf magnetron sputtered on polyester substrates</title><author><name sortKey="Carcia, P F" uniqKey="Carcia P">P. F. Carcia</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>DuPont Research & Development, Experimental Station, Wilmington, Delaware 19880-0356</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>DuPont Research & Development, Experimental Station, Wilmington</wicri:cityArea></affiliation></author><author><name sortKey="Mclean, R S" uniqKey="Mclean R">R. S. Mclean</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>DuPont Research & Development, Experimental Station, Wilmington, Delaware 19880-0356</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>DuPont Research & Development, Experimental Station, Wilmington</wicri:cityArea></affiliation></author><author><name sortKey="Reilly, M H" uniqKey="Reilly M">M. H. Reilly</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>DuPont Research & Development, Experimental Station, Wilmington, Delaware 19880-0356</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>DuPont Research & Development, Experimental Station, Wilmington</wicri:cityArea></affiliation></author><author><name sortKey="Li, Z G" uniqKey="Li Z">Z. G. Li</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>DuPont Research & Development, Experimental Station, Wilmington, Delaware 19880-0356</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>DuPont Research & Development, Experimental Station, Wilmington</wicri:cityArea></affiliation></author><author><name sortKey="Pillione, L J" uniqKey="Pillione L">L. J. Pillione</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Pennsylvanie</region></placeName><wicri:cityArea>Materials Research Laboratory, The Pennsylvania State University, University Park</wicri:cityArea></affiliation></author><author><name sortKey="Messier, R F" uniqKey="Messier R">R. F. Messier</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802</s1><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Pennsylvanie</region></placeName><wicri:cityArea>Materials Research Laboratory, The Pennsylvania State University, University Park</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0429979</idno><date when="2002-09-02">2002-09-02</date><idno type="stanalyst">PASCAL 02-0429979 AIP</idno><idno type="RBID">Pascal:02-0429979</idno><idno type="wicri:Area/Main/Corpus">00EB03</idno><idno type="wicri:Area/Main/Repository">00DE66</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal microstructure</term><term>Experimental study</term><term>Grain size</term><term>Indium compounds</term><term>Semiconductor growth</term><term>Semiconductor materials</term><term>Sputter deposition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8115C</term><term>6855A</term><term>6172</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur</term><term>Dépôt pulvérisation</term><term>Croissance semiconducteur</term><term>Microstructure cristalline</term><term>Grosseur grain</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Using rf magnetron sputtering, we have grown low resistivity (∼3×10<sup>-4</sup> Ωcm), high transparency (>80%) indium-tin-oxide thin films with near zero stress on polyester substrates, near room temperature. We concluded from analysis of sputtered ions and atoms that bombardment by energetic (>70 eV) negative oxygen ions caused high stress (∼1 GPa) in films grown at lower (6 mTorr) pressure. Sputtering at 12 mTorr dissipated energetic bombardment and reduced film stress to about zero, independent of oxygen partial pressure (pO<sub>2</sub>). However, increasing pO<sub>2</sub> did affect film microstructure, that is, crystallinity, roughness, and grain size. © 2002 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>81</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Low-stress indium-tin-oxide thin films rf magnetron sputtered on polyester substrates</s1></fA08><fA11 i1="01" i2="1"><s1>CARCIA (P. F.)</s1></fA11><fA11 i1="02" i2="1"><s1>MCLEAN (R. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>REILLY (M. 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All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0429979</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Using rf magnetron sputtering, we have grown low resistivity (∼3×10<sup>-4</sup> Ωcm), high transparency (>80%) indium-tin-oxide thin films with near zero stress on polyester substrates, near room temperature. We concluded from analysis of sputtered ions and atoms that bombardment by energetic (>70 eV) negative oxygen ions caused high stress (∼1 GPa) in films grown at lower (6 mTorr) pressure. Sputtering at 12 mTorr dissipated energetic bombardment and reduced film stress to about zero, independent of oxygen partial pressure (pO<sub>2</sub>). 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